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Title: Charging phenomena in pentacene-gold nanoparticle memory device
Authors: Leong, W. L.
Lee, Pooi See
Mhaisalkar, Subodh Gautam
Chen, Tupei
Dodabalapur, Ananth
Keywords: DRNTU::Engineering::Materials
Issue Date: 2007
Source: Leong, W. L., Lee, P. S., Mhaisalkar, S. G., Chen, T., & Dodabalapur, A. (2007). Charging phenomena in pentacene-gold nanoparticle memory device. Applied physics letters, 90(4).
Series/Report no.: Applied physics letters
Abstract: The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25–2.05 V achievable under 5–10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz–1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles.
DOI: 10.1063/1.2435598
Rights: © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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