Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94175
Title: Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes
Authors: Liu, Juqing
Yin, Zongyou
Cao, Xiehong
Zhao, Fei
Lin, Anping
Xie, Linghai
Fan, Qu-Li
Boey, Freddy Yin Chiang
Zhang, Hua
Huang, Wei
Keywords: DRNTU::Engineering::Materials
Issue Date: 2010
Source: Liu, J., Yin, Z., Cao, X., Zhao, F., Lin, A., Xie, L., et al. (2010). Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes. ACS Nano, 4(7), 3987-3992.
Series/Report no.: ACS nano
Abstract: A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104−105) and low switching threshold voltage (0.5−1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.
URI: https://hdl.handle.net/10356/94175
http://hdl.handle.net/10220/8572
ISSN: 1936-0851
DOI: 10.1021/nn100877s
Rights: © 2010 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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