Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94175
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dc.contributor.authorLiu, Juqingen
dc.contributor.authorYin, Zongyouen
dc.contributor.authorCao, Xiehongen
dc.contributor.authorZhao, Feien
dc.contributor.authorLin, Anpingen
dc.contributor.authorXie, Linghaien
dc.contributor.authorFan, Qu-Lien
dc.contributor.authorBoey, Freddy Yin Chiangen
dc.contributor.authorZhang, Huaen
dc.contributor.authorHuang, Weien
dc.date.accessioned2012-09-19T06:22:22Zen
dc.date.accessioned2019-12-06T18:52:00Z-
dc.date.available2012-09-19T06:22:22Zen
dc.date.available2019-12-06T18:52:00Z-
dc.date.copyright2010en
dc.date.issued2010en
dc.identifier.citationLiu, J., Yin, Z., Cao, X., Zhao, F., Lin, A., Xie, L., et al. (2010). Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes. ACS Nano, 4(7), 3987-3992.en
dc.identifier.issn1936-0851en
dc.identifier.urihttps://hdl.handle.net/10356/94175-
dc.description.abstractA unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104−105) and low switching threshold voltage (0.5−1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.en
dc.language.isoenen
dc.relation.ispartofseriesACS nanoen
dc.rights© 2010 American Chemical Society.en
dc.subjectDRNTU::Engineering::Materialsen
dc.titleBulk heterojunction polymer memory devices with reduced graphene oxide as electrodesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1021/nn100877sen
item.grantfulltextnone-
item.fulltextNo Fulltext-
Appears in Collections:MSE Journal Articles

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