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Title: Analytical modeling of reservoir effect on electromigration in Cu interconnects
Authors: Zaporozhets, T.
Tu, K. N.
Gusak, A. M.
Shao, W.
Gan, Zhenghao
Chen, Zhong
Mhaisalkar, Subodh Gautam
Keywords: DRNTU::Engineering::Materials
Issue Date: 2007
Source: Gan, Z., Gusak, A. M., Shao, W., Chen, Z., Mhaisalkar, S. G., Zaporozhets, T., et. al. (2007). Analytical modeling of reservoir effect on electromigration in Cu interconnects. Journal of materials research, 22(1), 152-156.
Series/Report no.: Journal of materials research
Abstract: Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.
DOI: 10.1557/jmr.2007.0001
Rights: © 2007 Materials Research Society. This paper was published in Journal of Materials Research and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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