Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94275
Title: An ANN-based smart capacitive pressure sensor in dynamic environment
Authors: Kot, Alex Chichung
Patra, Jagdish Chandra
Bos, Adriaan Van Den
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Control and instrumentation
Issue Date: 2000
Source: Patra, J. C., Bos, A. V. D., & Kot, A. C. (2000). An ANN-based smart capacitive pressure sensor in dynamic environment. Sensors and Actuators A: Physical, 86(1-2), 26-38.
Series/Report no.: Sensors and actuators A: physical
Abstract: A multilayer artificial neural network (ANN) is proposed for modeling of a capacitive pressure sensor (CPS). When the ambient temperature changes over a wide range, the nonlinear response characteristics of a CPS change significantly. In many practical conditions, the effect of temperature on the change in the CPS characteristics may be nonlinear. The proposed ANN model can provide correct readout of the applied pressure under such conditions. A novel scheme for estimation of the ambient temperature from the sensor characteristics itself is proposed. A second ANN is utilized to estimate the ambient temperature from the knowledge of the offset capacitance, i.e., the zero-pressure capacitance. A microcontroller unit (MCU)-based implementation scheme for this model is also considered. Simulation results show that this model can estimate the pressure with a maximum error of ±2% over a wide variation of temperature from −50°C to 150°C.
URI: https://hdl.handle.net/10356/94275
http://hdl.handle.net/10220/7141
ISSN: 0924-4247
DOI: 10.1016/S0924-4247(00)00360-5
Schools: School of Computer Engineering 
Rights: © 2000 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Sensors and Actuators A: Physical, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at DOI: http://dx.doi.org/10.1016/S0924-4247(00)00360-5.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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