Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94356
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dc.contributor.authorOng, K. K.en
dc.contributor.authorPey, Kin Leongen
dc.contributor.authorLee, Pooi Seeen
dc.contributor.authorWee, A. T. S.en
dc.contributor.authorWang, X. C.en
dc.contributor.authorTung, Chih Hangen
dc.contributor.authorTang, L. J.en
dc.contributor.authorChong, Y. F.en
dc.date.accessioned2012-05-17T03:01:41Zen
dc.date.accessioned2019-12-06T18:54:47Z-
dc.date.available2012-05-17T03:01:41Zen
dc.date.available2019-12-06T18:54:47Z-
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationOng, K. K., Pey, K. L., Lee, P. S., Wee, A. T. S., Wang, X. C., Tung, C. H., et al. (2006). Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 89(12).en
dc.identifier.urihttps://hdl.handle.net/10356/94356-
dc.description.abstractIn this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+ln junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing. p-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2354446. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materialsen
dc.titleRole of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistoren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1063/1.2354446en
dc.description.versionPublished versionen
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