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Title: Low-temperature growth of SnO2 nanorod arrays and tunable n-p-n sensing response of ZnO/SnO2 heterojunction for exclusive hydrogen sensors
Authors: Huang, Hui
Gong, Hua
Chow, Chee Lap
Guo, Jun
White, Timothy John
Tse, Man Siu
Tan, Ooi Kiang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2011
Source: Huang, H., Gong, H., Chow, C. L., Guo, J., White, T. J., Tse, M. S., et al. (2011). Low-Temperature Growth of SnO2 Nanorod Arrays and Tunable n-p-n Sensing Response of ZnO/SnO2 Heterojunction for Exclusive Hydrogen Sensors. Advanced Functional Materials, 21, 2680-2686.
Series/Report no.: Advanced functional materials
Abstract: Uniform SnO 2 nanorod arrays have been deposited at low temperature by plasma-enhanced chemical vapor deposition (PECVD). ZnO surface modifi cation is used to improve the selectivity of the SnO 2 nanorod sensor to H 2 gas. The ZnO-modifi ed SnO 2 nanorod sensor shows a normal n-type response to 100 ppm CO, NH 3 , and CH 4 reducing gas whereas it exhibits concentrationdependent n–p–n transitions for its sensing response to H 2 gas. This abnormal sensing behavior can be explained by the formation of n-ZnO/p-Zn-O-Sn/n-SnO 2 heterojunction structures. The gas sensors can be used in highly selective H 2 sensing and this study also opens up a general approach for tailoring the selectivity of gas sensors by surface modification.
ISSN: 1616-301X
DOI: 10.1002/adfm.201002115
Rights: © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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