Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94392
Title: Effective control of polarity in Bi0.9La0.1FeO3 thin films by dopant-related internal bias
Authors: Wang, Yang
Chen, Weigang
Chen, Zuhuang
Rami, Naidu Chukka
Wang, Junling
Wang, John
Chen, Lang
Keywords: DRNTU::Engineering::Materials
Issue Date: 2011
Source: Wang, Y., Chen, W., Chen, Z., Rami, N. C., Wang, J., Wang, J. & Chen, L. (2011). Effective control of polarity in Bi0.9La0.1FeO3 thin films by dopant-related internal bias. physica status solidi (a), 208(4), 919-923.
Series/Report no.: physica status solidi (a)
Abstract: The as-grown polarizations of Mn- and Ti-doped Bi0.9La0.1FeO3 thin films (BLFMn and BLFTi) are demonstrated to align in an upward direction due to the occurrence of an internal bias field Ei that points up. On the basis of the conductivity and XPS as well as leakage current measurements, Ei in BLFMn is attributed to an asymmetric distribution of charged defects, while the elevated Fermi level and broadened positively charged depletion zone are supposed to induce Ei in BLFTi. The different physical origins of Ei are intimately connected with the nature of aliovalent acceptor and donor dopants of Mn and Ti ions, which is further verified by the consistent voltage offsets in the piezoelectric hysteresis loops. This suggests an effective way to control the polarity of ferroelectric thin films through the tuning of chemical doping levels.
URI: https://hdl.handle.net/10356/94392
http://hdl.handle.net/10220/7517
DOI: 10.1002/pssa.201026628
Rights: © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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