Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94528
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dc.contributor.authorYan, Chaoyien
dc.contributor.authorSingh, Nandanen
dc.contributor.authorCai, Huien
dc.contributor.authorGan, Chee Lipen
dc.contributor.authorLee, Pooi Seeen
dc.date.accessioned2012-09-13T06:40:36Zen
dc.date.accessioned2019-12-06T18:57:27Z-
dc.date.available2012-09-13T06:40:36Zen
dc.date.available2019-12-06T18:57:27Z-
dc.date.copyright2010en
dc.date.issued2010en
dc.identifier.citationYan, C., Singh, N., Cai, H., Gan, C. L., & Lee, P. S. (2010). Network-enhanced photoresponse time of Ge nanowire photodetectors. ACS Applied Materials & Interfaces, 2(7), 1794-1797.en
dc.identifier.urihttps://hdl.handle.net/10356/94528-
dc.description.abstractWe demonstrated that the photoresponse time of Ge nanowire (NW) photodetectors could be greatly improved by using percolated NW networks (instead of single NW) as the active detection channels. Although the reset time for single-NW devices was >70 s, a fast reset time <1 s was observed for NW-network devices. The enhancement was attributed to the barrier-dominated conductance for network devices, which was not available in single-NW devices. The network structures provide ideal alternative solutions to the conventional single-NW photodetectors, given their superior performances and low-cost fabrication processes.en
dc.language.isoenen
dc.relation.ispartofseriesACS applied materials & interfacesen
dc.rights© 2010 American Chemical Societyen
dc.subjectDRNTU::Engineering::Materialsen
dc.titleNetwork-enhanced photoresponse time of Ge nanowire photodetectorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1021/am100321ren
item.grantfulltextnone-
item.fulltextNo Fulltext-
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