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Title: Silicide formation from laser thermal processing of Ti/Co bilayers
Authors: Chow, F. L.
Pey, Kin Leong
Lee, Pooi See
Tung, Chih Hang
Wang, X. C.
Lim, G. C.
Chong, Y. F.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2004
Source: Chow, F. L., Pey, K. L., Lee, P. S., Tung, C. H., Wang, X. C., Lim, G. C., et al. (2004). Silicide formation from laser thermal processing of Ti/Co bilayers. Electrochemical and Solid-State Letters, 7(10), G213-G215.
Series/Report no.: Electrochemical and solid-state letters
Abstract: A bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence of 0.6 J/cm2. The highly textured CoTi silicide is monocrystalline and fully coherent with the Si(111) plane of the substrate but has a large amount of microstructural defects. The constitutional supercooling phenomenon is the solidification mechanism responsible for the highly textured CoTi silicide. The incomplete crystallization shown by the presence of the amorphous CoTi silicide is attributed to a high concentration of titanium impurity.
DOI: 10.1149/1.1788612
Schools: School of Materials Science & Engineering 
Rights: © 2004 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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