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Title: Electroless copper seed layer deposition on tantalum nitride barrier film
Authors: Chong, S. P.
Law, S. B.
Ee, Elden Yong Chiang
Chen, Zhong
Issue Date: 2004
Source: Chong, S. P., Ee, E. Y. C., Chen, Z., & Law, S. B. (2004). Electroless copper seed layer deposition on tantalum nitride barrier film. Surface and coatings technology, 198(1-3), 287-290.
Series/Report no.: Surface and coatings technology
Abstract: Electroless (EL) deposition is used as a seeding technology for Cu metallization in the back-end-of-line semiconductor fabrication process. In this work, effect of deposition time and annealing treatment on the properties of electroless copper seed layer are reported. It is found that all seed layers exceeding 2-min deposition possess a (111) texture. The grain size, morphology and resistivity of the electroless Cu vary with deposition time. The largest grain size obtained by current work is around 70 nm. This corresponds to the lowest resistivity of 4.30 μΩ cm. The surface roughness of as-deposited Cu films ranges from 36.6 to 51.9 nm. Annealing results in the growth of copper grains and improvement in surface roughness and film conductivity. The annealing treatment does not change the existing texture.
DOI: 10.1016/j.surfcoat.2004.10.086
Rights: © 2004 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Surface and Coatings Technology, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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