Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94709
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dc.contributor.authorBakaul, Saidur Rahmanen
dc.contributor.authorWu, Tomen
dc.contributor.authorHu, W.en
dc.contributor.authorKimura, T.en
dc.date.accessioned2013-02-20T01:51:52Zen
dc.date.accessioned2019-12-06T19:00:51Z-
dc.date.available2013-02-20T01:51:52Zen
dc.date.available2019-12-06T19:00:51Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationBakaul, S. R., Hu, W., Wu, T., & Kimura, T. (2012). Intrinsic domain-wall resistivity in half-metallic manganite thin films. Physical Review B, 86(18).en
dc.identifier.urihttps://hdl.handle.net/10356/94709-
dc.identifier.urihttp://hdl.handle.net/10220/9175en
dc.description.abstractDeciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La0.7Sr0.3MnO3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La0.7Sr0.3MnO3 to be 1.9×10−15 Ω·m2.en
dc.language.isoenen
dc.relation.ispartofseriesPhysical review Ben
dc.rights© 2012 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1103/PhysRevB.86.184404]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.titleIntrinsic domain-wall resistivity in half-metallic manganite thin filmsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.86.184404en
dc.description.versionPublished versionen
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