Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94732
Title: Bismuth-catalyzed growth of germanium nanowires in vapor phase
Authors: Yan, Chaoyi
Lee, Pooi See
Keywords: DRNTU::Engineering::Materials
Issue Date: 2009
Source: Yan, C., & Lee, P. S. (2009). Bismuth-catalyzed growth of germanium nanowires in vapor phase. The Journal of Physical Chemistry C, 113(6), 2208-2211.
Series/Report no.: The journal of physical chemistry C
Abstract: We report the successful synthesis of single crystalline Ge nanowires using Bi as catalyst. To the best of our knowledge, this is the first time Bi was used in vapor phase for Ge nanowire growth. An in situ catalyst evaporation method was used to obtain the high quality Ge nanowires. Diameters of the nanowires are in the range of 10−40 nm and the growth direction is along <111>. Composition analyses showed that the nanowires were composed of Ge while the capping catalyst particles were Bi. Controlled experiments showed that source material with proper Bi/Ge molar ratio was a key aspect for the growth of high purity nanowires. The low-temperature growth of Ge nanowires, enabled by the low eutectic point of Bi/Ge, is especially desired for their potential integration with existing semiconductor technologies.
URI: https://hdl.handle.net/10356/94732
http://hdl.handle.net/10220/8510
DOI: 10.1021/jp8111414
Rights: © 2009 American Chemical Society
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

SCOPUSTM   
Citations 10

26
Updated on Jan 23, 2023

Web of ScienceTM
Citations 10

24
Updated on Jan 17, 2023

Page view(s) 5

1,217
Updated on Jan 27, 2023

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.