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|Title:||Layer inversion of Ni(Pt)Si on mixed phase Si films||Authors:||Osipowicz, T.
Lee, Pooi See
Pey, Kin Leong
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials||Issue Date:||2002||Source:||Lee, P. S., Pey, K. L., Mangelick, D., Ding, J., Osipowicz, T., & See, A. (2002). Layer inversion of Ni(Pt)Si on mixed phase Si films. Electrochemical and Solid-State Letters, 5(3), G15-G17.||Series/Report no.:||Electrochemical and solid-state letters||Abstract:||The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites.||URI:||https://hdl.handle.net/10356/94804
|DOI:||10.1149/1.1447442||Rights:||© 2002 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1447442. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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