Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/94809
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dc.contributor.authorShakerzadeh, Maziaren
dc.contributor.authorTeo, Edwin Hang Tongen
dc.contributor.authorTay, Beng Kangen
dc.date.accessioned2013-03-01T02:32:03Zen
dc.date.accessioned2019-12-06T19:02:41Z-
dc.date.available2013-03-01T02:32:03Zen
dc.date.available2019-12-06T19:02:41Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationShakerzadeh, M., Teo, E. H. T., & Tay, B. K. (2012). Thickness dependency of field emission in amorphous and nanostructured carbon thin films. Nanoscale Research Letters, 7(1), 286.en
dc.identifier.issn1556-276Xen
dc.identifier.urihttps://hdl.handle.net/10356/94809-
dc.description.abstractThickness dependency of the field emission of amorphous and nanostructured carbon thin films has been studied. It is found that in amorphous and carbon films with nanometer-sized sp2 clusters, the emission does not depend on the film thickness. This further proves that the emission happens from the surface sp2 sites due to large enhancement of electric field on these sites. However, in the case of carbon films with nanocrystals of preferred orientation, the emission strongly depends on the film thickness. sp2-bonded nanocrystals have higher aspect ratio in thicker films which in turn results in higher field enhancement and hence easier electron emission.en
dc.language.isoenen
dc.relation.ispartofseriesNanoscale research lettersen
dc.rights© 2012 The Author(s).en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin filmsen
dc.titleThickness dependency of field emission in amorphous and nanostructured carbon thin filmsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1186/1556-276X-7-286en
dc.description.versionPublished versionen
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