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Title: Nickel silicide formation using multiple-pulsed laser annealing
Authors: Setiawan, Y.
Chow, F. L.
Lee, Pooi See
Pey, Kin Leong
Wang, X. C.
Lim, G. C.
Keywords: DRNTU::Engineering::Materials
Issue Date: 2007
Source: Setiawan, Y., Lee, P. S., Pey, K. L., Wang, X. C., Lim, G. C., & Chow, F. L. (2007). Nickel silicide formation using multiple-pulsed laser annealing. Journal of Applied Physics, 101(3).
Series/Report no.: Journal of applied physics
Abstract: The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni(Ti) /Si system was studied. A layered structure consisting of both crystalline NiSi2 and Ni-rich Ni–Si amorphous phases with a protective TiOx overlayer was formed after five-pulsed laser annealing at 0.4 J cm−2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3 J cm−2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.
DOI: 10.1063/1.2433707
Rights: © 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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