Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95006
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dc.contributor.authorNguyen, Chien A.en
dc.contributor.authorLee, Pooi Seeen
dc.contributor.authorNg, Nathanielen
dc.contributor.authorSu, Haibinen
dc.contributor.authorMhaisalkar, Subodh Gautamen
dc.contributor.authorMa, Janen
dc.contributor.authorBoey, Freddy Yin Chiangen
dc.date.accessioned2012-05-16T04:49:37Zen
dc.date.accessioned2019-12-06T19:06:21Z-
dc.date.available2012-05-16T04:49:37Zen
dc.date.available2019-12-06T19:06:21Z-
dc.date.copyright2007en
dc.date.issued2007en
dc.identifier.citationNguyen, C. A., Lee, P. S., Ng, N., Su, H., Mhaisalkar, S. G., Ma, J., et al. (2007). Anomalous polarization switching in organic ferroelectric field effect transistors. Applied physics letters, 91(4).en
dc.identifier.urihttps://hdl.handle.net/10356/95006-
dc.description.abstractThe authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2757092. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materialsen
dc.titleAnomalous polarization switching in organic ferroelectric field effect transistorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1063/1.2757092en
dc.description.versionPublished versionen
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