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Title: Anomalous polarization switching in organic ferroelectric field effect transistors
Authors: Nguyen, Chien A.
Lee, Pooi See
Ng, Nathaniel
Su, Haibin
Mhaisalkar, Subodh Gautam
Ma, Jan
Boey, Freddy Yin Chiang
Keywords: DRNTU::Engineering::Materials
Issue Date: 2007
Source: Nguyen, C. A., Lee, P. S., Ng, N., Su, H., Mhaisalkar, S. G., Ma, J., et al. (2007). Anomalous polarization switching in organic ferroelectric field effect transistors. Applied physics letters, 91(4).
Series/Report no.: Applied physics letters
Abstract: The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors.
DOI: 10.1063/1.2757092
Rights: © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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