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Title: Textured Ni(Pt) germanosilicide formation on a condensed Si1-xGex/Si substrate
Authors: Setiawan, Y.
Balakumar, S.
Tan, Eu Jin
Pey, Kin Leong
Lee, Pooi See
Keywords: DRNTU::Engineering::Materials
Issue Date: 2009
Source: Setiawan, Y., Balakumar, S., Tan, E. J., Pey, K. L., & Lee, P. S. (2009). Textured Ni(Pt) germanosilicide formation on a condensed Si1-xGex/Si substrate. Journal of the Electrochemical Society, 156(6).
Series/Report no.: Journal of the electrochemical society
Abstract: A study of Ni and Ni(Pt) germanosilicidation on a condensed Si1−xGex/Si substrate was performed. The partial relaxation of the condensed SiGe layer resulted in an improvement in the morphological stability of the germanosilicide through the alleviation of compressive stress. Pt alloying to the Ni film resulted in highly textured Ni(Pt) germanosilicide grains, particularly in the (002) orientation, due to the reduction in the interfacial energy caused by the presence of Pt alloy. Pt atoms diffuse slowly and result in a variation in lattice parameters in the Ni(Pt)SiGe grain as a function of depth. Nevertheless, Pt alloying has increased the morphological stability of the NiPtSiGe film.
DOI: 10.1149/1.3121204
Rights: © 2009 The Electrochemical Society. This paper was published in Journal of the Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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