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Title: Effect of ion implantation on layer inversion of Ni silicided poly-Si
Authors: Mangelinck, D.
Osipowicz, T.
Dai, J. Y.
Chan, L.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Chi, Dong Zhi
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2002
Source: Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., Chi, D. Z, Osipowicz, T., et al. (2002). Effect of ion implantation on layer inversion of Ni silicided poly-Si. Journal of The Electrochemical Society, 149(9), G505-G509.
Series/Report no.: Journal of the electrochemical society
Abstract: The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + and N2+ , which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.
DOI: 10.1149/1.1494828
Rights: © 2002 The Electrochemical Society. This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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