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Title: Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
Authors: Chan, T. K.
Osipowicz, T.
Chan, L.
Chan, Mei Yin
Lee, Pooi See
Keywords: DRNTU::Engineering::Materials
Issue Date: 2009
Source: Chan, M. Y., Chan, T. K., Osipowicz, T., Chan, L., & Lee, P. S. (2009). Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties. Applied physics letters, 95(11).
Series/Report no.: Applied physics letters
Abstract: A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high-k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window.
DOI: 10.1063/1.3224188
Rights: © 2009 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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