Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95228
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dc.contributor.authorKumar, Adityaen
dc.contributor.authorHe, Minen
dc.contributor.authorChen, Zhongen
dc.date.accessioned2013-03-12T04:07:38Zen
dc.date.accessioned2019-12-06T19:10:48Z-
dc.date.available2013-03-12T04:07:38Zen
dc.date.available2019-12-06T19:10:48Z-
dc.date.copyright2004en
dc.date.issued2004en
dc.identifier.citationKumar, A., He, M., & Chen, Z. (2005). Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder. Surface and Coatings Technology, 198(1-3), 283-286.en
dc.identifier.issn0257-8972en
dc.identifier.urihttps://hdl.handle.net/10356/95228-
dc.description.abstractElectroless Ni–P with a thin layer of immersion gold has been considered as a promising under bump metallization (UBM) for low-cost flip–chip technology. However, the presence of P in electroless Ni–P causes complicated interfacial reactions, which affect the reliability of solder joint. In this work, barrier properties of thin Au/Ni–P UBM between Cu substrate and Sn–3.5Ag solder were investigated during annealing at 160, 180, and 200 °C in terms of IMC formation. Multilayer Sn–3.5Ag/Au/Ni–P/Cu sample was prepared by electroless chemical plating and solder reflow for the investigation. Annealing results showed that electroless Ni–P acts as a good barrier for Sn diffusion at 160 and 180 °C. However, it fails to protect the Cu substrate from reacting with Sn at 200 °C. The reason is that the electroless Ni–P layer starts converting into a ternary Ni–Sn–P layer at 200 °C. Complete conversion of the Ni–P layer into Ni–Sn–P, results in the formation of two Cu–Sn intermetallics, Cu6Sn5 and Cu3Sn, at the Ni–Sn–P/Cu interface and the formation of (NixCu1−x)6Sn5 intermetallic at the Ni3Sn4/Ni–Sn–P interface.en
dc.language.isoenen
dc.relation.ispartofseriesSurface and coatings technologyen
dc.rights© 2004 Elsevier B.V. This is the author created version of a work that has been peer reviewed and accepted for publication by Surface and Coatings Technology, Elsevier B.V. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.surfcoat.2004.10.085 ].en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materialsen
dc.titleBarrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solderen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1016/j.surfcoat.2004.10.085en
dc.description.versionAccepted versionen
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