Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95231
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dc.contributor.authorDalapati, Goutam Kumaren
dc.contributor.authorWong, Terence Kin Shunen
dc.contributor.authorLi, Yangen
dc.contributor.authorChia, Ching Keanen
dc.contributor.authorDas, Aninditaen
dc.contributor.authorMahata, Chandreswaren
dc.contributor.authorGao, Hanen
dc.contributor.authorChattopadhyay, Sanatanen
dc.contributor.authorKumar, Manippady Krishnaen
dc.contributor.authorSeng, Hwee Lengen
dc.contributor.authorMaiti, Chinmay Kumaren
dc.contributor.authorChi, Dong Zhien
dc.date.accessioned2013-03-05T02:47:24Zen
dc.date.accessioned2019-12-06T19:10:53Z-
dc.date.available2013-03-05T02:47:24Zen
dc.date.available2019-12-06T19:10:53Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationDalapati, G. K., Wong, T. K. S., Li, Y., Chia, C. K., Das, A., Mahata, C., et al. (2012). Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping. Nanoscale Research Letters, 7.en
dc.identifier.urihttps://hdl.handle.net/10356/95231-
dc.description.abstractElectrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).en
dc.language.isoenen
dc.relation.ispartofseriesNanoscale research lettersen
dc.rights© 2012 The Authors.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleCharacterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn dopingen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.openurlhttp://www.nanoscalereslett.com/content/7/1/99en
dc.description.versionPublished versionen
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