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DC Field | Value | Language |
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dc.contributor.author | Dalapati, Goutam Kumar | en |
dc.contributor.author | Wong, Terence Kin Shun | en |
dc.contributor.author | Li, Yang | en |
dc.contributor.author | Chia, Ching Kean | en |
dc.contributor.author | Das, Anindita | en |
dc.contributor.author | Mahata, Chandreswar | en |
dc.contributor.author | Gao, Han | en |
dc.contributor.author | Chattopadhyay, Sanatan | en |
dc.contributor.author | Kumar, Manippady Krishna | en |
dc.contributor.author | Seng, Hwee Leng | en |
dc.contributor.author | Maiti, Chinmay Kumar | en |
dc.contributor.author | Chi, Dong Zhi | en |
dc.date.accessioned | 2013-03-05T02:47:24Z | en |
dc.date.accessioned | 2019-12-06T19:10:53Z | - |
dc.date.available | 2013-03-05T02:47:24Z | en |
dc.date.available | 2019-12-06T19:10:53Z | - |
dc.date.copyright | 2012 | en |
dc.date.issued | 2012 | en |
dc.identifier.citation | Dalapati, G. K., Wong, T. K. S., Li, Y., Chia, C. K., Das, A., Mahata, C., et al. (2012). Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping. Nanoscale Research Letters, 7. | en |
dc.identifier.uri | https://hdl.handle.net/10356/95231 | - |
dc.description.abstract | Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Nanoscale research letters | en |
dc.rights | © 2012 The Authors. | en |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering | en |
dc.title | Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.identifier.openurl | http://www.nanoscalereslett.com/content/7/1/99 | en |
dc.description.version | Published version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles |
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10. Characterization of epitaxial GaAs MOS capacitors using atomic.pdf | 914.13 kB | Adobe PDF | View/Open |
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