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|Title:||Crystallization and surface texturing of amorphous-Si induced by UV laser for photovoltaic application||Authors:||Hong, Lei
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Hong, L., Wang, X., Rusli , Wang, H., Zheng, H., & Yu, H. (2012). Crystallization and surface texturing of amorphous-Si induced by UV laser for photovoltaic application. Journal of Applied Physics, 111(4).||Series/Report no.:||Journal of applied physics||Abstract:||The DPSS Nd:YVO4 UV laser is used to anneal amorphous silicon (a-Si) film to achieve crystallization and nano-dome surface texturing simultaneously in a one-step annealing process. With pulse energy of 380 mJ/cm2 and repetition rate of 20 kHz, the a-Si can be crystallized by the sequential lateral solidification process, which is evidenced by both SEM characterization and Raman spectra. In addition, the nano-dome like structure is confirmed by AFM characterization, which can lead to ∼200% boost in terms of light absorption as measured by UV-Visible - Near-infrared scanning spectrophotometer. This study highlights the great potential of Nd:YVO4 UV laser for its application in thin film Si solar cell industry to improve the film quality and light trapping capability.||URI:||https://hdl.handle.net/10356/95246
|ISSN:||0021-8979||DOI:||10.1063/1.3686612||Rights:||© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3686612]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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