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dc.contributor.authorPrasad, K.en
dc.contributor.authorGan, Zhenghaoen
dc.contributor.authorMhaisalkar, Subodh Gautamen
dc.contributor.authorChen, Zhongen
dc.contributor.authorZhang, Samen
dc.contributor.authorChen, Zheen
dc.identifier.citationGan, Z. H., Mhaisalkar, S. G., Chen, Z., Zhang, S., Chen, Z., & Prasad, K. (2004). Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test. Surface and coatings technology, 198(1-3), 85-89.en
dc.description.abstractAdhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As the sizes of transistors are scaled down to submicron regime, new materials and multilayered thin film structures are applied, which pose a great challenge to quantify the adhesion energy of the interfaces in order to optimize the structures of the multilayered thin films. In this paper, the four-point bending technique is used to quantify the adhesion energy (Gc) between interfaces in multilayered thin film structures for ULSI. An example is presented to demonstrate the applicability of the four-point bending technique for determining the adhesion strength of the SiC/porous polyarylene ether (PAE)/SiC interface. The Gc value obtained is 26.2 J/m2, higher than that of the SiN/PAE interface reported by others, indicating a good adhesion. The resulting fracture surfaces were then characterized by field emission scanning electron microscopy (FESEM) and X-ray photoelectron spectroscopy (XPS) to identify the location of the debonded path. It is found that the crack propagates alternatively between the two PAE/SiC interfaces.en
dc.relation.ispartofseriesSurface and coatings technologyen
dc.rights© 2004 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Surface and Coatings Technology, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin filmsen
dc.titleStudy of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending testen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.description.versionAccepted versionen
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