Please use this identifier to cite or link to this item:
|Title:||The electronic barrier height of silicon native oxides at different oxidation stages||Authors:||Qin, H. L.
Goh, K. E. J.
Pey, Kin Leong
|Issue Date:||2012||Source:||Qin, H. L., Goh, K. E. J., Troadec, C., Bosman, M., & Pey, K. L. (2012). The electronic barrier height of silicon native oxides at different oxidation stages. Journal of applied physics, 111(5).||Series/Report no.:||Journal of applied physics||Abstract:||A systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron transmission decreases with increasing oxidation time, the electronic barrier height remains the same, even after oxidation for 1 week. After oxidation for 26 months, the oxide layer showed the bulk-like SiO2 barrier; however, some local areas still show the same barrier height as that of an Au/n-Si device. This demonstrates the non-uniformity of native oxide growth.||URI:||https://hdl.handle.net/10356/95358
|ISSN:||0021-8979||DOI:||10.1063/1.3693556||Rights:||© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3693556]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
Files in This Item:
|25. The electronic barrier height of silicon native oxides at different oxidation stages.pdf||875.09 kB||Adobe PDF|
Updated on Sep 1, 2020
Updated on Mar 5, 2021
Page view(s) 50427
Updated on May 26, 2022
Updated on May 26, 2022
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.