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Title: Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
Authors: Singh, Pushpapraj
Park, Woo-Tae
Miao, Jianmin
Shao, Lichun
Kotlanka, Rama Krishna
Kwong, Dim Lee
Keywords: DRNTU::Science::Physics::Electricity and magnetism
Issue Date: 2012
Source: Singh, P., Park, W.- T., Miao, J., Shao, L., Kotlanka, R. K., & Kwong, D. L. (2012). Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor. Applied physics letters, 100(6), 063106.
Series/Report no.: Applied physics letters
Abstract: The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10−11 Pa−1 to 207 × 10−11 Pa−1 under compressive and tensile strain conditions. Results reveal that the low frequency noise is reduced when operated in subthreshold region. The higher piezoresistive coefficient and reduced noise improve the sensor resolution (minimum detectable strain) by sixteen times. NWFET operates at low bias with higher piezoresistance and signal-to-noise ratio and offers promising applications in strain sensors.
ISSN: 0003-6951
DOI: 10.1063/1.3683516
Rights: © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MAE Journal Articles

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