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Title: Resistive switching in a GaOx-NiOx p-n heterojunction
Authors: Sun, Xiaowei
Leck, Kheng Swee
Zheng, K.
Zhao, J. L.
Vinh, V. Q.
Zhao, R.
Yeo, Y. G.
Law, L. T.
Teo, K. L.
Keywords: DRNTU::Science::Physics
Issue Date: 2012
Source: Zheng, K., Zhao, J. L., Sun, X., Vinh, V. Q., Leck, K. S., Zhao, R., et al. (2012). Resistive switching in a GaOx-NiOx p-n heterojunction. Applied physics letters, 101(14), 143110-.
Series/Report no.: Applied physics letters
Abstract: We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching behavior coincides with the switching between Ohmic conduction (low resistance) and rectifying behavior (high resistance) of the heterojunction diode. Under external electric field, electromigrated intrinsic defects, such as oxygen vacancies and oxygen ions, accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaOx and p-NiOx, leading to the switching between Ohmic and diode characteristics of the device. The device shows good endurance, retention performance, and scaling capability, signaling the potential of a diode-structured resistive switching device for non-volatile memory applications.
ISSN: 0003-6951
DOI: 10.1063/1.4757761
Rights: © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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