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dc.contributor.authorZhang, X. H.en
dc.contributor.authorChen, B. J.en
dc.contributor.authorChua, S. J.en
dc.contributor.authorDong, Zhilien
dc.contributor.authorHu, Xiaoen
dc.contributor.authorTan, Swee Tiamen
dc.contributor.authorSun, Xiaoweien
dc.contributor.authorYong, Annaen
dc.identifier.citationTan, S. T., Sun, X., Zhang, X. H., Chen, B. J., Chua, S. J., Yong, A., et al. (2006). Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition. Journal of Crystal Growth, 290(2), 518-522.en
dc.description.abstractZinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80K showed that the emission of QDs embedded film ranged from 3.0 to 3.6eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.en
dc.format.extent12 p.en
dc.relation.ispartofseriesJournal of crystal growthen
dc.rights© 2006 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Crystal Growth, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at:
dc.titleZinc oxide quantum dots embedded films by metal organic chemical vapor depositionen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.description.versionAccepted versionen
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