Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95587
Title: Dip-pen nanolithography-generated patterns used as gold etch resists : a comparison study of 16-mercaptohexadecanioc acid and 1-octadecanethiol
Authors: Lu, Gang
Chen, Yanhong
Li, Bing
Zhou, Xiaozhu
Xue, Can
Ma, Jan
Boey, Freddy Yin Chiang
Zhang, Hua
Keywords: DRNTU::Engineering::Materials
Issue Date: 2009
Source: Lu, G., Chen, Y., Li, B., Zhou, X., Xue, C., Ma, J., et al. (2009). Dip-pen nanolithography-generated patterns used as gold etch resists : a comparison study of 16-mercaptohexadecanioc acid and 1-octadecanethiol. The Journal of Physical Chemistry C, 113(10), 4184-4187.
Series/Report no.: The journal of physical chemistry C
Abstract: The etch resist ability of dip-pen nanolithography (DPN)-generated dot patterns of different alkanethiols on Au was systematically studied. After 16-mercaptohexadecanioc acid (MHA) and 1-octadecanethiol (ODT) dots with different diameters were patterned on a Au substrate by DPN, the substrate was etched in a feri-/ferrocyanide solution. Tapping mode AFM (TMAFM) was used to monitor the morphology change of the patterned dots during the wet chemical etching. The diameter and height of MHA and ODT dots at different etch time were measured by TMAFM. The resist ability of the patterned MHA and ODT SAMs on Au was compared. The result shows that the MHA patterns have better etch resist ability than do ODT patterns.
URI: https://hdl.handle.net/10356/95587
http://hdl.handle.net/10220/8602
ISSN: 1932-7447
DOI: 10.1021/jp810746j
Rights: © 2009 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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