Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95634
Title: A nanoelectromechanical-switch-based thermal management for 3-D integrated many-core memory-processor system
Authors: Huang, Xiwei
Zhang, Chun
Yu, Hao
Zhang, Wei
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Huang, X., Zhang, C., Yu, H., & Zhang, W. (2012). A nanoelectromechanical-switch-based thermal management for 3-D integrated many-core memory-processor system. IEEE Transactions on Nanotechnology, 11(3), 588-600.
Series/Report no.: IEEE transactions on nanotechnology
Abstract: Tera-scale has become the recent interest for high-performance computing system. In order to increase bandwidth yet decrease power, 3-D integrated many-core memory-processor system is one of the most promising solutions. However, the increased power density and longer vertical heat-removal path in 3-D can result in thermal reliability concerns such as thermal runaway and thermal stability, which pose a significant barrier for tera-scale applications. Due to “green-switch” properties such as zero leakage current, infinite subthreshold slope, and temperature resilient behavior, nanoelectromechanical switches (NEMS) are explored in this paper to mitigate the thermal reliability issues for 3-D integrated many-core memory-processor system. The NEMS-based thermal management for 3-D integrated many-core memory-processor system is examined from device, circuit, and system levels, respectively. Moreover, one real-time thermal management is developed for improving system reliability with the use of NEMS-based thermal buffer and power gating. Experimental results show that our proposed approach can effectively prevent the thermal runaway and also maintain high thermal stability for 3-D integrated many-core memory-processor system.
URI: https://hdl.handle.net/10356/95634
http://hdl.handle.net/10220/8749
DOI: 10.1109/TNANO.2012.2186822
Rights: © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/TNANO.2012.2186822].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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