Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95651
Title: Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Authors: Tang, L. J.
Tan, Eu Jin
Pey, Kin Leong
Chi, Dong Zhi
Lee, Pooi See
Keywords: DRNTU::Engineering::Materials
Issue Date: 2006
Source: Tan, E. J., Pey, K. L., Chi, D. Z., Lee, P. S., & Tang, L. J. (2006). Improved Electrical Performance of Erbium Silicide Schottky Diodes formed by pre-RTA Amorphization of Si. IEEE Electron Device Letters, 27(2), 93-95.
Series/Report no.: IEEE electron device letters
Abstract: Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the ϕ_Beff and of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.
URI: https://hdl.handle.net/10356/95651
http://hdl.handle.net/10220/8338
DOI: 10.1109/LED.2005.863142
Rights: © 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2005.863142.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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