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|Title:||High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure||Authors:||Anil Kumar, P.
Sarma, D. D.
Ogale, Satishchandra B.
|Keywords:||DRNTU::Science::Physics::Electricity and magnetism||Issue Date:||2012||Source:||Thakare, V., Xing, G., Peng, H., Rana, A., Game, O., Anil Kumar, P., et al. (2012). High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure. Applied Physics Letters, 100(17), 172412-.||Series/Report no.:||Applied physics letters||Abstract:||The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0–100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.||URI:||https://hdl.handle.net/10356/95675
|ISSN:||0003-6951||DOI:||10.1063/1.4707373||Rights:||© 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4707373]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
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