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Title: Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO2 thin films
Authors: Li, Yongfeng
Deng, Rui
Tian, Yufeng
Yao, Bin
Wu, Tom
Keywords: DRNTU::Science::Physics::Atomic physics
Issue Date: 2012
Source: Li, Y., Deng, R., Tian, Y., Yao, B., & Wu, T. (2012). Role of donor-acceptor complexes and impurity band in stabilizing ferromagnetic order in Cu-doped SnO2 thin films. Applied Physics Letters, 100(17).
Series/Report no.: Applied physics letters
Abstract: Our complementary magnetic and photoluminescence measurements reveal the correlation between the donor-acceptor complex and the ferromagnetic order in Cu-doped SnO2 thin films. Oxygen vacancies (VO) and Cu dopants form defect complexes of donor-acceptor pairs, and the associated spin-polarized impurity band leads to the narrowing of bandgap. Electronic structure calculations based on the first-principles method demonstrate that the Cu-VO complex has low formation energy and can stabilize the ferromagnetic coupling. Our results suggest that intrinsic defects and their complexes with dopants play a key role for establishing the ferromagnetic order in doped wide-bandgap oxides.
ISSN: 0003-6951
DOI: 10.1063/1.4705419
Rights: © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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