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|Title:||Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode||Authors:||Qi, K. C.
Zhao, Jun Liang
Tan, Swee Tiam
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2008||Source:||Ling, B., Sun, X., Zhao, J. L., Tan, S. T., Dong, Z. L., Yang, Y., et al. (2009). Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode. Physica E, 41(4), 635-639.||Series/Report no.:||Physica E||Abstract:||n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ~390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs.||URI:||https://hdl.handle.net/10356/95679
|DOI:||10.1016/j.physe.2008.10.017||Rights:||© 2008 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Physica E, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: http://dx.doi.org/10.1016/j.physe.2008.10.017.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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