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Title: Tailoring the lasing modes in semiconductor nanowire cavities using intrinsic self-absorption
Authors: Liu, Xinfeng
Zhang, Qing
Xiong, Qihua
Sum, Tze Chien
Keywords: DRNTU::Science::Mathematics
Issue Date: 2013
Source: Liu, X., Zhang, Q., Xiong, Q., & Sum, T. C. (2013). Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption. Nano Letters, 13(3), 1080-1085.
Series/Report no.: Nano letters
Abstract: Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) lasers is key to the development of high-performance nanoscale oscillators, amplified semiconductor/plasmon lasers and single photon emitters, and so forth. Modification of semiconductor band structure/bandgap through electric field modulation, elemental doping, or alloying semiconductors has so far gained limited success in achieving output mode tunability of the NW laser. One stifling issue is the considerable optical losses induced in the NW cavities by these extrinsic methods that limit their applicability. Herein we demonstrate a new optical self-feedback mechanism based on the intrinsic self-absorption of the gain media to achieve low-loss, room-temperature NW lasing with a high degree of mode selectivity (over 30 nm). The cadmium sulfide (CdS) NW lasing wavelength is continuously tunable from 489 to 520 nm as the length of the NWs increases from 4 to 25 μm. Our straightforward approach is widely applicable in most semiconductor or semiconductor/plasmonic NW cavities.
ISSN: 1530-6984
DOI: 10.1021/nl304362u
Rights: © 2013 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Letters, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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