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|Title:||Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2∕CoFe heterostructures||Authors:||Xia, B.
Li, Z. P.
|Keywords:||DRNTU::Science::Mathematics::Topology||Issue Date:||2012||Source:||Xia, B., Ren, P., Sulaev, A., Li, Z. P., Liu, P., Dong, Z. L., et al. (2012). Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2∕CoFe heterostructures. AIP Advances, 2(4), 042171-.||Series/Report no.:||AIP advances||Abstract:||Topological insulator is composed of an insulating bulk state and time reversal symmetry protected two-dimensional surface states. One of the characteristics of the surface states is the locking between electron momentum and spin orientation. Here, we report a novel in-plane anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. To explain the novel effect, we propose that the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructure forms a spin-valve or Giant magnetoresistance device due to spin-momentum locking. The novel in-plane anisotropic magnetoresistance can be explained as a Giant magnetoresistance effect of the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures.||URI:||https://hdl.handle.net/10356/95781
|DOI:||10.1063/1.4769894||Rights:||© 2012 The Author(s). This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4769894]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
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