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Title: Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
Authors: Ji, Yun
Zhang, Zi-Hui
Tan, Swee Tiam
Ju, Zhengang
Kyaw, Zabu
Hasanov, Namig
Liu, Wei
Sun, Xiaowei
Demir, Hilmi Volkan
Issue Date: 2013
Source: Ji, Y., Zhang, Z.-H., Tan, S. T., Ju, Z., Kyaw, Z., Hasanov, N., et al. (2013). Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier. Optics letters, 38(2), 202-204.
Series/Report no.: Optics letters
Abstract: We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure.
DOI: 10.1364/OL.38.000202
Rights: © 2013 Optical Society of America. This paper was published in Optics Letters and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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