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Title: Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
Authors: Li, Y. F.
Pan, H. L.
Yao, B.
Xu, Y.
Li, J. C.
Zhang, L. G.
Zhao, H. F.
Shen, D. Z.
Wu, T.
Deng, Rui
Issue Date: 2012
Source: Li, Y. F., Pan, H. L., Yao, B., Deng, R., Xu, Y., Li, J. C., et al. (2012). Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films. Journal of physics D : applied physics, 45(7).
Series/Report no.: Journal of physics D : applied physics
Abstract: We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−xCuxO1−ySy system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−xCuxO1−ySy alloy with high hole concentration is promising to find applications in spintronic devices.
DOI: 10.1088/0022-3727/45/7/075002
Rights: © 2012 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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