Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95832
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dc.contributor.authorLi, Y. F.en
dc.contributor.authorPan, H. L.en
dc.contributor.authorYao, B.en
dc.contributor.authorXu, Y.en
dc.contributor.authorLi, J. C.en
dc.contributor.authorZhang, L. G.en
dc.contributor.authorZhao, H. F.en
dc.contributor.authorShen, D. Z.en
dc.contributor.authorWu, T.en
dc.contributor.authorDeng, Ruien
dc.date.accessioned2013-07-15T07:23:47Zen
dc.date.accessioned2019-12-06T19:22:09Z-
dc.date.available2013-07-15T07:23:47Zen
dc.date.available2019-12-06T19:22:09Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLi, Y. F., Pan, H. L., Yao, B., Deng, R., Xu, Y., Li, J. C., et al. (2012). Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films. Journal of physics D : applied physics, 45(7).en
dc.identifier.urihttps://hdl.handle.net/10356/95832-
dc.description.abstractWe report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−xCuxO1−ySy system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−xCuxO1−ySy alloy with high hole concentration is promising to find applications in spintronic devices.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of physics D : applied physicsen
dc.rights© 2012 IOP Publishing Ltd.en
dc.titleHole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin filmsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1088/0022-3727/45/7/075002en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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