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|Title:||Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films||Authors:||Li, Y. F.
Pan, H. L.
Li, J. C.
Zhang, L. G.
Zhao, H. F.
Shen, D. Z.
|Issue Date:||2012||Source:||Li, Y. F., Pan, H. L., Yao, B., Deng, R., Xu, Y., Li, J. C., et al. (2012). Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films. Journal of physics D : applied physics, 45(7).||Series/Report no.:||Journal of physics D : applied physics||Abstract:||We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−xCuxO1−ySy system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−xCuxO1−ySy alloy with high hole concentration is promising to find applications in spintronic devices.||URI:||https://hdl.handle.net/10356/95832
|DOI:||10.1088/0022-3727/45/7/075002||Rights:||© 2012 IOP Publishing Ltd.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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