Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95927
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dc.contributor.authorGoh, Wang Lingen
dc.contributor.authorArasu, Muthukumaraswamy Annamalaien
dc.contributor.authorJe, Minkyuen
dc.contributor.authorYu, Junen
dc.date.accessioned2013-07-12T06:02:36Zen
dc.date.accessioned2019-12-06T19:23:26Z-
dc.date.available2013-07-12T06:02:36Zen
dc.date.available2019-12-06T19:23:26Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationYu, J., Goh, W. L., Arasu, M. A., & Je, M. (2012). A 60-V, > 225°C Half-Bridge Driver for Piezoelectric Acoustic Transducer, on SOI CMOS. IEEE Transactions on Circuits and Systems II: Express Briefs, 59(11), 771-775.en
dc.identifier.issn1549-7747en
dc.identifier.urihttps://hdl.handle.net/10356/95927-
dc.description.abstractThis brief presents a high-voltage (HV) transducer driver to fulfill the requirement of the proposed high-data-rate down-hole acoustic telemetry system. The driver is targeted to drive a stack of piezoelectric disks modeled as a capacitive load of 0.3 μF and across a broadband from 600 Hz to 1.2 kHz. To ensure stability, the driver is designed as an open-loop system, comprising a dead-time controller, level shifters, gate drivers, and power MOSFETs. The driver is fabricated using the 1.0- μm silicon-on-insulator CMOS process and its performance is investigated up to 260 °C, far beyond the specified process limit of 225 °C. The experimental results also validated the functionality of the HV Class-D-type driver for voltages up to 60 V.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on circuits and systems II : express briefsen
dc.rights© 2012 IEEE.en
dc.titleA 60-V, > 225°C half-bridge driver for piezoelectric acoustic transducer, on SOI CMOSen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TCSII.2012.2228396en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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