Please use this identifier to cite or link to this item:
Title: The origin of sub-bands in the Raman D-band of graphene
Authors: Luo, Zhiqiang
Cong, Chunxiao
Zhang, Jun
Xiong, Qihua
Yu, Ting
Issue Date: 2012
Source: Luo, Z., Cong, C., Zhang, J., Xiong, Q., & Yu, T. (2012). The origin of sub-bands in the Raman D-band of graphene. Carbon, 50(11), 4252-4258.
Series/Report no.: Carbon
Abstract: In Raman spectroscopy investigations of defective suspended graphene, splitting in the D band is observed. Four double resonance Raman scattering processes: the outer and inner scattering processes, as well as the scattering processes with electrons first scattered by phonons (“phonon-first”) or by defects (“defect-first”), are found to be responsible for these features of the D band. The D sub-bands associated with the outer and inner processes merge with increasing defect concentration. However a Stokes/anti-Stokes Raman study indicates that the splitting of the D band due to the separate “phonon-first” and “defect-first” processes is valid for suspended graphene. For graphene samples on a SiO2/Si substrate, the sub-bands of D band merge due to the increased Raman broadening parameter resulting from the substrate doping. Moreover, the merging of the sub-bands shows excitation energy dependence, which can be understood by considering the energy dependent lifetime and/or scattering rate of photo-excited carriers in the Raman scattering process.
ISSN: 0008-6223
DOI: 10.1016/j.carbon.2012.05.008
Rights: © 2012 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

Citations 10

Updated on Mar 6, 2021

Citations 10

Updated on Mar 8, 2021

Page view(s) 50

Updated on Apr 19, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.