Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95988
Title: The origin of sub-bands in the Raman D-band of graphene
Authors: Luo, Zhiqiang
Cong, Chunxiao
Zhang, Jun
Xiong, Qihua
Yu, Ting
Issue Date: 2012
Source: Luo, Z., Cong, C., Zhang, J., Xiong, Q., & Yu, T. (2012). The origin of sub-bands in the Raman D-band of graphene. Carbon, 50(11), 4252-4258.
Series/Report no.: Carbon
Abstract: In Raman spectroscopy investigations of defective suspended graphene, splitting in the D band is observed. Four double resonance Raman scattering processes: the outer and inner scattering processes, as well as the scattering processes with electrons first scattered by phonons (“phonon-first”) or by defects (“defect-first”), are found to be responsible for these features of the D band. The D sub-bands associated with the outer and inner processes merge with increasing defect concentration. However a Stokes/anti-Stokes Raman study indicates that the splitting of the D band due to the separate “phonon-first” and “defect-first” processes is valid for suspended graphene. For graphene samples on a SiO2/Si substrate, the sub-bands of D band merge due to the increased Raman broadening parameter resulting from the substrate doping. Moreover, the merging of the sub-bands shows excitation energy dependence, which can be understood by considering the energy dependent lifetime and/or scattering rate of photo-excited carriers in the Raman scattering process.
URI: https://hdl.handle.net/10356/95988
http://hdl.handle.net/10220/10809
ISSN: 0008-6223
DOI: 10.1016/j.carbon.2012.05.008
Rights: © 2012 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

SCOPUSTM   
Citations 10

35
Updated on Mar 6, 2021

PublonsTM
Citations 10

31
Updated on Mar 8, 2021

Page view(s) 50

392
Updated on Apr 19, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.