Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/95991
Title: Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission
Authors: Liang, Y. Y.
Ngo, C. Y.
Fitzgerald, Eugene A.
Yoon, Soon Fatt
Loke, Wan Khai
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Liang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2012). Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission. Journal of Physics D: Applied Physics, 45(14), 145103-.
Series/Report no.: Journal of physics D : applied physics
Abstract: GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates.
URI: https://hdl.handle.net/10356/95991
http://hdl.handle.net/10220/11368
DOI: 10.1088/0022-3727/45/14/145103
Rights: © 2012 IOP Publishing Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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