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dc.contributor.authorLiang, Y. Y.en
dc.contributor.authorNgo, C. Y.en
dc.contributor.authorFitzgerald, Eugene A.en
dc.contributor.authorYoon, Soon Fatten
dc.contributor.authorLoke, Wan Khaien
dc.identifier.citationLiang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2012). Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission. Journal of Physics D: Applied Physics, 45(14), 145103-.en
dc.description.abstractGaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates.en
dc.relation.ispartofseriesJournal of physics D : applied physicsen
dc.rights© 2012 IOP Publishing Ltd.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleCharacteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emissionen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
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