Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96042
Title: Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement
Authors: Ang, X. F.
Wei, J.
Leong, K. C.
Tan, Chuan Seng
Lim, Dau Fatt
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2011
Series/Report no.: Microelectronics reliability
Abstract: Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 °C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded Cusingle bondCu layer.
URI: https://hdl.handle.net/10356/96042
http://hdl.handle.net/10220/11241
DOI: 10.1016/j.microrel.2011.04.003
Rights: © 2011 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SIMTech Journal Articles

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