Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/96042
Title: | Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement | Authors: | Ang, X. F. Wei, J. Leong, K. C. Tan, Chuan Seng Lim, Dau Fatt |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics | Issue Date: | 2011 | Series/Report no.: | Microelectronics reliability | Abstract: | Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 °C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded Cusingle bondCu layer. | URI: | https://hdl.handle.net/10356/96042 http://hdl.handle.net/10220/11241 |
DOI: | 10.1016/j.microrel.2011.04.003 | Rights: | © 2011 Elsevier Ltd. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | SIMTech Journal Articles |
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