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Title: Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge
Authors: Zhang, L.
Li, H. Y.
Peng, L.
Lo, Guo-Qing
Kwong, Dim Lee
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Series/Report no.: IEEE electron device letters
Abstract: The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing Al2O3-induced negative fixed charge (|Qf| = 7.44 × 1011 cm-2) at the Si-liner interface. This causes a positive shift in the flat-band voltage (ΔVFB = 6.85 V) and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests (~0-5 V). The leakage current density of the TSV with Al2O3 layer and PETEOS liner is improved by ~10× after annealing in forming gas (N2/H2) at 300 °C for 30 min.
DOI: 10.1109/LED.2012.2190968
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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