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|Title:||Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge||Authors:||Zhang, L.
Li, H. Y.
Kwong, Dim Lee
Tan, Chuan Seng
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Series/Report no.:||IEEE electron device letters||Abstract:||The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing Al2O3-induced negative fixed charge (|Qf| = 7.44 × 1011 cm-2) at the Si-liner interface. This causes a positive shift in the flat-band voltage (ΔVFB = 6.85 V) and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests (~0-5 V). The leakage current density of the TSV with Al2O3 layer and PETEOS liner is improved by ~10× after annealing in forming gas (N2/H2) at 300 °C for 30 min.||URI:||https://hdl.handle.net/10356/96076
|DOI:||10.1109/LED.2012.2190968||Rights:||© 2012 IEEE.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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