Please use this identifier to cite or link to this item:
Title: Cu–Cu hermetic seal enhancement using self-assembled monolayer passivation
Authors: Peng, L.
Leong, K. C.
Lim, Dau Fatt
Fan, Ji
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Materials::Electronic packaging materials
Issue Date: 2013
Source: Lim, D. F., Fan, J., Peng, L., Leong, K. C., & Tan, C. S. (2013). Cu–Cu hermetic seal enhancement using self-assembled monolayer passivation. Journal of electronic materials, 42(3), 502-506.
Series/Report no.: Journal of electronic materials
Abstract: Low-temperature Cu–Cu thermocompression bonding enabled by self-assembled monolayer (SAM) passivation for hermetic sealing application is investigated in this work. Cavities are etched to a volume of 1.4 × 10−3 cm3 in accordance with the MIL-STD-883E standard prescribed for microelectronics packaging. The wafer pairs (nonfunctional cavity wafer and cap wafer) are annealed and bonded at 250°C under a bonding force of 5500 N. The encapsulated cavities undergo helium overpressure in a bombing chamber, and the helium leak rate is detected by a mass spectrometer. The measurement results show that the cavities sealed with Cu–Cu bonding after SAM passivation exhibit excellent hermeticity with a leak rate below 10−9 atm cm3/s, which is an improvement of at least 2× compared with the control sample without SAM passivation.
DOI: 10.1007/s11664-012-2353-6
Rights: © 2013 The Minerals, Metals and Materials Society (TMS) (published by Springer).
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.