Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/96183
Title: | Cu–Cu hermetic seal enhancement using self-assembled monolayer passivation | Authors: | Peng, L. Leong, K. C. Lim, Dau Fatt Fan, Ji Tan, Chuan Seng |
Keywords: | DRNTU::Engineering::Materials::Electronic packaging materials | Issue Date: | 2013 | Source: | Lim, D. F., Fan, J., Peng, L., Leong, K. C., & Tan, C. S. (2013). Cu–Cu hermetic seal enhancement using self-assembled monolayer passivation. Journal of electronic materials, 42(3), 502-506. | Series/Report no.: | Journal of electronic materials | Abstract: | Low-temperature Cu–Cu thermocompression bonding enabled by self-assembled monolayer (SAM) passivation for hermetic sealing application is investigated in this work. Cavities are etched to a volume of 1.4 × 10−3 cm3 in accordance with the MIL-STD-883E standard prescribed for microelectronics packaging. The wafer pairs (nonfunctional cavity wafer and cap wafer) are annealed and bonded at 250°C under a bonding force of 5500 N. The encapsulated cavities undergo helium overpressure in a bombing chamber, and the helium leak rate is detected by a mass spectrometer. The measurement results show that the cavities sealed with Cu–Cu bonding after SAM passivation exhibit excellent hermeticity with a leak rate below 10−9 atm cm3/s, which is an improvement of at least 2× compared with the control sample without SAM passivation. | URI: | https://hdl.handle.net/10356/96183 http://hdl.handle.net/10220/18163 |
DOI: | 10.1007/s11664-012-2353-6 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | Research Techno Plaza | Rights: | © 2013 The Minerals, Metals and Materials Society (TMS) (published by Springer). | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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