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Title: p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas
Authors: Sun, Xiao Wei
Demir, Hilmi Volkan
Zhang, Zi-Hui
Kyaw, Zabu
Liu, Wei
Tan, Swee Tiam
Ji, Yun
Ju, Zhengang
Zhang, Xueliang
Issue Date: 2013
Source: Zhang, Z.-H., Tan, S. T., Kyaw, Z., Liu, W., Ji, Y., Ju, Z., et al. (2013). p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas. Applied Physics Letters, 103(26), 263501-.
Series/Report no.: Applied physics letters
Abstract: Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.
DOI: 10.1063/1.4858386
Rights: © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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