Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHou, Debinen
dc.contributor.authorHong, Weien
dc.contributor.authorGoh, Wang Lingen
dc.contributor.authorXiong, Yong-Zhongen
dc.contributor.authorArasu, Muthukumaraswamy Annamalaien
dc.contributor.authorHe, Jinen
dc.contributor.authorChen, Jixinen
dc.contributor.authorMadihian, Mohammaden
dc.identifier.citationHou, D., Hong, W., Goh, W. L., Xiong, Y. Z., Arasu, M. A., He, J., et al. (2012). Distributed Modeling of Six-Port Transformer for Millimeter-Wave SiGe BiCMOS Circuits Design. IEEE Transactions on Microwave Theory and Techniques, 60(12), 3728-3738.en
dc.description.abstractIn this paper, a six-port distributed model of on-chip single-turn transformers in silicon that can predict the features of the transformers up to 200 GHz is presented. Moreover, the proposed model is scalable with the diameter of the transformer. Based on the developed model, a transformer balun with improved differential-port balance is deployed in a D-band up-conversion mixer design in 0.13-μm SiGe BiCMOS technology. The mixer achieves a measured conversion gain (CG) of 4 ~ 7 dB and local-oscillator-to-RF isolation over 30 dB from 110 to 140 GHz. The results have one of the best CGs in the millimeter-wave range. A D-band two-stage transformer-coupled power amplifier (PA) integrated with a mixer is also reported here. Using the six-port transformer model, the performance of the PA can be conveniently optimized. At a 2-V supply, the gain and saturated output power of 20 dB and 8 dBm, respectively, are both experimentally achieved at 127 GHz. At 3 V, the measured output power rose to 11 dBm and this is the best power performance among the reported D-band silicon-based amplifiers to date.en
dc.relation.ispartofseriesIEEE transactions on microwave theory and techniquesen
dc.rights© 2012 IEEE.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDistributed modeling of six-port transformer for millimeter-wave SiGe BiCMOS circuits designen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
item.fulltextNo Fulltext-
Appears in Collections:EEE Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.